After ten years hard working, CHInano® has become China's largest and most influential nanotechnology application industry exchange event, and we create the best scenario for nanotechnology corporate image display, product promotion, technical exchange and market expansion.

CHInano 2019 organized 1 plenary speech and 16 theme sessions, 530 industry reports, and invited a total of 23 academicians at home and abroad. CHInano 2019 set up 18,000 ㎡exhibition area, attracting 8 domestic and foreign delegations, 27 countries, and more than 1,600 nanotechnology companies to join the exhibition. The total number of visitors was 16,008 during the event, which has reached a record high.

The third-generation wide band gap semiconductor materials are represented by silicon carbide (SiC), gallium nitride (GaN), zinc oxide (ZnO), diamond and aluminum nitride (AlN), which are applied mainly in semiconductor lighting, power electronics, laser and probing equipment and other fields; each filed is on a different phase of development. In the cutting-edge research fields, the wide band gap semiconductor is still in lab research stage and in the future will see wide applications in photoelectronic components, power electronics fields, etc. Its excellent performance will enable it to play a significant role in multiple modern industries with huge market potential and prospects in the future.